AFR broadband phase modulator combines high linearity with low driving voltage and small footprint, covering frequency range from DC up to 8 GHz. The extended operating temperature range given by this series of phase modulators can operate at different environmental applications.
AFR offers Thin Film Lithium Niobate (TFLN) modulator chips in different formats and data rate, including DR8 and 2 x FR4 @ 100 Gbps/lane for 800 Gbps applications and DR4 @ 400 Gbps/lane for 1.6 Tbps applications. With expereince and know-how, AFR engineers are available to customize our products to meet customers' specific requirements.
The 40G-Thin Film modulator design is based on a dual parallel structure of 2 Mach-Zehnder modulators embedded in a Mach-Zehnder super-structure. Each internal modulator is designed to have EO bandwidth above 20 GHz. Monitor photodiode is provided for automatic bias control.
AFR's HB-CDM-130G is a quad-channel 130 GBaud high-bandwidth coherent driver modulator integrated with an RF driver, based on Thin-Film LiNbO3 chip. It is designed for 400/800 Gb/s or 1.2Tb/s coherent optical transport systems and transceivers, with baud rate over 130G per channel.
AFR's new AM70 XT Thin-Film LiNbO3 intensity modulator expands the performance of traditional modulators by combining a much lower driving voltage and a smaller footprint with bandwidth exceeding 60 GHz. Equipped with V connectors and featuring an extended operating temperature range, the AM70 XT is the most advanced solution for shifting analog fiber optic link transmissions to higher frequencies. AFR engineers are available to support customers by providing detailed product specifications to help address specific application requirements.
The 40G-IQ-XT modulator design is based on a dual parallel structure of 2 Mach-Zehnder modulators embedded in a Mach-Zehnder super-structure. Each internal modulator is designed to have EO bandwidth above 20 GHz. Monitor photodiode is provided for automatic bias control. The 40G-IQ-XT version is provided with an extended operating temperature of - 55 to + 85°C for different environmental applications.
AFR high bandwidth zero-chirp F10 modulators are based on the Mach-Zehnder Interferometer (MZI) architecture. They are manufactured using the highly reliable titanium indiffusion technology in X-Cut, Y-Propagating LiNbO3 substrates. The F10 is a single drive modulator designed for high bit rate advanced metro to long haul communication systems that requires the superior performance. The F10 modulator contains an integrated photo detector that may be used to set and lock the DC bias on the modulator as well as provide an estimate of the modulator output optical power.
AFR broadband analog intensity modulators combine high linearity with a low driving voltage and small footprint, covering the entire frequency range from 20 GHz to beyond 40 GHz (AM20-XT: 20 - 30 GHz; AM40-XT: More than 30 GHz). The AM-XT version provides an extended operating temperature range of - 55 to + 85°C for harsh environmental applications.
