Key Features
● Common Mode Rejection Ratio: ＞ 25 dB
● Wavelength Range: 900 - 1700 nm
● Bandwidth @ 3 dB: DC-200 M, 400 M
| Parameter | Unit | Value |
| Detector Material | - | InGaAs-PIN |
| Operating Wavelength Range | nm | 900 - 1700 |
| RF OUTPUT Conversion Gain¹ | V/mW | 22.5 or 10 |
| RF OUTPUT Voltage ² | V | 3.5 or 1.8 |
| Responsivity | A/W | 0.9 |
| Detector Active Area Diameter | mm | 0.045 |
| Common Mode Rejection Ratio | dB | ≥ 25 |
| Saturation Power³ | μW | 155 or 180 |
| Minimum NEP | pW/√Hz | 8.52 |
| Storage Temperature | ℃ | - 40 to + 85 |
| Operating Temperature | ℃ | - 15 to + 65 |
| Dimensions | mm | 85 × 80 × 30 |
1RF OUTPUT Coversion Gain: 200 M version, 22.5 V/mW; 400 M version, 10 V/Mw.
2RF OUTPUT Voltage: 200 M version, 3.5 V; 400 M version, 1.8 V.
3Saturation Power: 200 M version, 155 μW; 400 M vesion, 180 μW.
