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Revolutionizing High-Speed Optical Devices: The Promising Future of TFLN Dec 27, 2023

Dec. 27, 2023 – The relentless expansion of data traffic in fiber-optic communication networks, fueled by emerging technologies such as artificial intelligence (AI) and big data, has become a driving force for innovation. According to Allied Market Research, the global data center market is anticipated to soar to $24.6 billion by 2031, with a remarkable compound annual growth rate (CAGR) of 5.9%. This surge in data transmission demands high-speed optical devices capable of handling the increased workload.


Key Advantages of TFLN Material

Conventional optical modules currently employ chips based on silicon photonics and indium phosphide platforms. Nevertheless, constraints in material bandwidth and suboptimal linearity have given rise to bottlenecks for applications exceeding 800 Gbps. A revolutionary solution to these challenges arises with the introduction of thin-film lithium niobate (TFLN) material.

Items

LiNbO3

InP

SiPh

TFLN

Performance compared to other materials

Optical Loss (dB)

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Excellent

Max. Bandwidth (GHz)

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Excellent

Half-Wave Voltage Vπ (V)

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Excellent

Extinction Ratio (dB)

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Excellent

Chip Length (mm)

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Median

Linearity

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Excellent

Integration

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Excellent

Cost

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(Reduced after scaling)

Median

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Table 1. Comparison of Material Technology for Optical Devices

In Table 1, TFLN emerges as a promising material technology, surpassing mature counterparts like LiNbO₃, InP, and SiPh. Notably, TFLN stands out with its remarkable advantages in low optical loss and large bandwidth. Its excellence extends to key performance factors like Half-Wave Voltage, Extinction Ratio, Linearity, and Seamless Integration, marking it as a leading contender in optical innovation. As the technology matures and market applications broaden, the cost of TFLN is expected to decrease, driven by economies of scale in production.


TFLN Industry Chain Solidifies for Future Breakthroughs

The optimistic outlook of the TFLN industry is drawing numerous technology enterprises, fostering the rapid development of a complete ecosystem. Key players such as AFR (headquartered in Zhuhai, China), HyperLight (based in Cambridge, MA, USA), Liobate (situated in Nanjing, China), NanoLN (located in Jinan, China) and Novel Si Integrated Technology (based in Shanghai, China) have pledged their dedication to forging a robust chain in this burgeoning field, covering materials, wafers, chips, modulators, and optical modules. With a unified commitment to collaboration across the industrial chain, the year 2024 is expected to witness remarkable breakthroughs in this rapidly evolving sector.

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